منابع مشابه
Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling
We have developed a surface potential based compact model for the single-walled semiconductor CNT field effect transistor (CNT-FET) shown in Figure 1. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are shown in Figures 2-5 respectively. The model comparison is done using the numerical results of [1-4]. The compact model is developed for ...
متن کاملPerformance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study
In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...
متن کاملfabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Junction Field Effect Transistor (JFET)
The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes...
متن کاملSubmicrometer Polymer Field - Effect Transistor
Recent developments towards future polymer electronics are aimed at different applications as organic displays, complementary circuits, and all-polymer integrated circuits [1-3]. Basic devices are organic field-effect transistors (OFET, cross section in Figs.2 and 3) with an active layer made from an organic material. Until now the achieved performance of OFET's is not sufficient for envisaged ...
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ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2007
ISSN: 1226-7945
DOI: 10.4313/jkem.2007.20.5.389